unisonic technologies co., ltd 9n80 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-493.e 9 a , 800v n-channel power mosfet ? description the utc 9n80 is an n-channel mode power mosfet using utc?s advanced technology to provide costumers with planar stripe and dmos technology. this technology is specialized in allowing a minimum on-state resistance and supe rior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 9n80 is universally applied in high efficiency switch mode power supply. ? features * r ds(on) = 1.3 ? @v gs = 10 v * improved gate charge * lower input capacitance * lower leakage current: 25 a (max.) @ v ds = 800v ? symbol 1 to-220f1 to-220 1 to-220f2 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 9n80l-ta3-t 9n80g-ta3-t to-220 g d s tube 9n80l-tf1-t 9n80g-tf1-t to-220f1 g d s tube 9N80L-TF2-T 9n80g-tf2-t to-220f2 g d s tube note: pin assignment: g: gate d: drain s: source
9n80 preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-493.e ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 800 v gate-source voltage v gss 30 v avalanche current (note 2 ) i ar 9 a drain current (continuous) continuous i d 9 a pulsed (note 2) i dm 36 a avalanche energy single pulsed (note 3) e as 900 mj repetitive (note 2) e ar 24 mj peak diode recovery dv/dt (note 4) dv/dt 2.0 v/ns power dissipation to-220 p d 147 w to-220f1 49 to-220f2 51 junction temperature t j +150 c storage temperature t stg -55~+150 c note: 1. absolute maximum ratings are those values beyond which the device c ould be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l = 21mh, i as = 9a, v dd = 50v, r g = 27 ? , starting t j = 25c 4. i sd 9a, di/dt 180a/s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case to-220 jc 0.85 c/w to-220f1 2.55 to-220f2 2.45
9n80 preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-493.e ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 800 v breakdown voltage temperature coefficient bv dss /t j i d =250a 0.96 v/c drain-source leakage current i dss v ds =800v 25 a gate- source leakage current forward i gss v gs =+30v +100 na reverse v gs =-30v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =5v, i d =250a 3 5 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =4.5a 1.05 1.3 ? forward transconductance g fs v ds =50v, i d =4.5a (note 1) 5.54 s dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz, 2020 2600 pf output capacitance c oss 195 230 pf reverse transfer capacitance c rss 82 95 pf switching parameters total gate charge q g v gs =10v, v ds =640v, i d =9a, (note 1, 2) 93 120 nc gate to source charge q gs 14.3 nc gate to drain charge q gd 42.1 nc turn-on delay time t d ( on ) v dd =400v, i d =9 a, r g =16 ? , (note 1, 2) 25 60 ns rise time t r 37 85 ns turn-off delay time t d ( off ) 113 235 ns fall-time t f 42 95 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s integral reverse pn-diode in the mosfet 9 a maximum pulsed drain-source diode forward current (note 1) i sm 36 a drain-source diode forward voltage (note 1) v sd i s =9a, v gs =0v, t j =25c 1.4 v reverse recovery time t r r t j =25c, i f =9a, di f /dt=100a/s, (note 1) 560 ns reverse recovery charge q rr 8.4 c note: 1. pulse test: pulse width 250s, duty cycle 2% 2. essentially independent of operating temperature
9n80 preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-493.e ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
9n80 preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-493.e ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circui t gate charge waveform unclamped inductive switching test circuit unclamped inductive switching waveforms utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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